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| MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE QM300DY-24 * * * * * IC Collector current ........................ 300A VCEX Collector-emitter voltage ......... 1200V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION AC motor controllers, UPS, CVCF, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 114 M8 27 25 21.5 2-M6 B2X B2 E2 18 B2X C1 E2 B2 6 C2E1 E2 21 6 B1 E1 7 B1X 14 C1 114 38 15 93 C2E1 E2 6 8 5.5 6 B1X E1 B1 4-6.5 93 1 6.5 (7) 34.5 21 Tab#187, t=0.8 Tab#110, t=0.5 21 8 17 8 17 31 1 LABEL Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1200 1200 1200 7 300 300 1980 16 3000 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M6 2500 1.96~2.94 20~30 8.83~10.8 90~110 1.96~2.94 20~30 1100 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm N*m kg*cm g -- Mounting torque Main terminal screw M8 Mounting screw M6 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1200V, VEB=2V VCB=1200V,Emitter open VEB=7V IC=300A, IB=6A -IC=-300A (diode forward voltage) IC=300A, VCE=5V Min. -- -- -- -- -- -- 750 -- VCC=600V, IC=300A, IB1=-IB2=6.0A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 4.0 4.0 400 3.0 3.5 1.8 -- 3.0 15 3.0 0.063 0.3 0.04 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) 500 COLLECTOR CURRENT IC (A) 400 DC CURRENT GAIN hFE IB=6.0A IB=3.0A 10 4 7 5 3 2 10 3 7 5 3 2 VCE=2.8V VCE=5.0V 300 200 0A IB=2. A =1.0 IB IB=0.5A 100 Tj=25C 0 1 2 3 4 5 VCE (V) 0 10 2 7 5 3 Tj=25C 2 Tj=125C 10 1 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER VOLTAGE VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) BASE CURRENT IB (A) 10 2 7 5 3 2 10 1 7 5 3 2 10 0 7 5 3 2 10 -1 1.8 2.2 2.6 3.0 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 VBE(sat) SATURATION VOLTAGE VCE(sat) VCE=2.8V Tj=25C 3.4 VBE (V) IB=6A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 3.8 BASE-EMITTER VOLTAGE COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 IC=300A 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 10 2 7 5 3 2 10 1 7 5 3 2 VCC=600V IB1=-IB2=6A ts 3 SWITCHING TIME IC=200A 2 tf IC=100A 1 Tj=25C Tj=125C 0 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 2 3 5 7 10 1 10 0 7 5 3 Tj=25C ton 2 Tj=125C -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 10 2 7 5 4 3 2 10 1 7 5 4 3 2 10 0 10 -1 VCC=600V IB1=6A IC=300A Tj=25C Tj=125C REVERSE BIAS SAFE OPERATING AREA 640 COLLECTOR CURRENT IC (A) ts, tf (s) 560 IB2=-6A 480 400 320 240 160 80 Tj=125C 0 0 400 800 1200 1600 IB2=-12A ts SWITCHING TIME tf 2 3 45 7 10 0 2 3 45 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 100 50s 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) DERATING FACTOR (%) DC 100s 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 200 s COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 0.08 0.07 0.06 1m s 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) 10 3 7 5 3 2 10 2 7 5 3 2 10 1 7 5 3 2 10 0 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Zth (j-c) (C/ W) 0.05 0.04 0.03 0.02 0.01 0 10 -3 2 3 5 7 10 -2 2 3 5 7 10 -1 2 3 5 7 10 0 Tj=25C Tj=125C 0 0.4 0.8 1.2 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM300DY-24 HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 3200 2800 2400 Irr (A), Qrr (c) REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 7 VCC=600V 5 IB1=-IB2=6A 3 Tj=25C 2 Tj=125C 10 2 7 5 3 2 10 2 Irr 10 1 trr (s) 2000 1600 1200 800 400 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Qrr 10 1 10 0 7 5 3 trr 2 10 -1 10 0 10 0 2 3 5 7 10 1 2 3 5 7 10 2 2 3 5 7 10 3 FORWARD CURRENT IF (A) CONDUCTION TIME (CYCLES AT 60Hz) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 5 7 10 1 2 3 5 7 0.40 0.32 Zth (j-c) (C/ W) 0.24 0.16 0.08 0 10 -3 2 3 5 7 10 -2 2 3 5 710 -1 2 3 5 7 10 0 TIME (s) Feb.1999 |
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